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ROHM developed SiC Schottky Barrier Diodes “SCS3 Series”

ROHM, a world-renowned semiconductor manufacturer, has developed a third generation SiC ( Silicon Carbide ) Schottky barrier diode ( hereinafter referred to as ” SiC – SBD” ) SCS 3 Series, which is very suitable for power PFC circuits ※ 1 for servers and high-end computers.

This product adopts a new structure, not only inherits the industry’s lowest direct voltage ※ 2 ( VF = 1.35 V, 25 ℃ ) realized by the 2nd generation SiC – SBD in mass production, but also ensures high surge current resistance. Therefore, it can also be used in power PFC circuits of servers and high-end computers, which is very helpful to improve the efficiency of applications.

This product has already started selling samples in March 2016 and is planned to be put into mass production gradually in April 2016. The production base of the previous process is Rohm Apollo Co., Ltd. ( Fukuoka County, Japan ), and the production base of the later process is Rohm Korea Corporation ( Korea ).

In the future, ROHM will continue to contribute to energy conservation of power electronic equipment by expanding the lineup of SiC components.

< background >

In recent years, in the fields of power electronics such as solar power generation systems, various industrial power supply devices, electric vehicles and household appliances, more efficient power component products are expected in order to improve power conversion efficiency to achieve further energy saving. Compared with previous Si devices, SiC devices have excellent material properties and are increasingly widely used in these fields. Especially in equipment power supplies requiring higher power efficiency, such as servers, SiC – SBD products are used in PFC circuits to improve equipment efficiency due to their fast recovery characteristics. In these applications, the surge current ※3 characteristic becomes an important parameter. For a long time, ROHM’s first and second generation SiC – SBD products have been well received by customers. In order to further expand the scope of application, Rohm has adopted a new product structure and successfully developed a product that maintains the industry’s highest level of low VF characteristics and achieves high surge current resistance.

< features >

1. Maintain low VF characteristics and realize high surge current resistance

The 3rd Generation SiC – SBD ” SCS 3 Series” developed this time adopts JBS ( Junction Barrier Schottky ) structure to achieve high surge current resistance. In the past, the structure can effectively improve surge current resistance and leakage characteristics, while Rohm’s third-generation latest products not only have the characteristics of the previous products, but also further improve the low VF characteristics realized by the second-generation SiC – SBD, and will play a great role as a higher-performance product.

2. Achieve the lowest direct voltage in the industry ( VF = 1.35 V / 25 ℃, 1.44 V / 150 ℃ )

ROHM’s 2nd Generation SiC – SBD has achieved the lowest direct voltage in the industry by improving the process and product structure. At high temperature, the VF value of this product is lower than that of the second generation product, the conduction loss is lower, and the efficiency is higher.

3. Low leakage current characteristics

In general, reducing direct voltage will lead to an increase in reverse leakage current, while Rohm’s 3rd generation latest SiC – SBD products adopt JBS structure, successfully reducing leakage current and direct voltage. Compared with the 2nd generation SiC – SBD, the leakage current of this product at rated voltage is as low as about 1 / 20 ( 650 V, TJ = 150 ℃.

< product lineup >

The product lineup of the TO – 220 ACP package is expanding. In addition, on this basis, the product lineup of TO – 263 AB ( surface mount type ) package will be gradually expanded.



Forward Current ( IF )




















☆ Under development

< application >

PFC circuit in high-end power supply equipment such as computers, servers and air conditioners

< explanation of terms >

1 PFC circuit ( power factor correction ) ※

A circuit that controls the higher harmonic current generated by the power supply within a certain range and suppresses the peak current in order to further save energy.

2 direct voltage ( VF ) ※

The voltage generated when electricity flows from + to – drops. The lower the value, the more efficient it will be.

3 surge current ※

Instantaneous excess of normal current generated by power supply circuit caused by lightning strike, etc.