Insulate-Gate Bipolar Transistor—IGBT

Insulate-Gate Bipolar Transistor—IGBT

Insulate Gate Bipolar Transistor IGBT combines the Power Transistor (Giant Transistor – GTR) and Power field effect Transistor (Power MOSFET), the advantages of good characteristics, application field is very wide;
IGBT is also a three-terminal device: gate, collector, and emitter.
IGBT (InsulatedGateBipolarTransistor) is a bipolar devices, MOS structure belongs to a power MOSFET performance at high speed and low resistance performance of the bipolar power devices.
The application range of IGBT is generally above 600V, above 10A current and above 1kHz frequency.
It is widely used in industrial electric motors, civil low-capacity electric motors, transducers (inverters), strobe observers for cameras, InductionHeating electric rice cookers and other fields.
According TO the packaging, IGBT can be divided into two types. One is a three-end monomer package with molded resin seal, and a series has been formed from to-3p TO small surface mount.
The other is a modular type that pairs IGBT with FWD (fleewheelmodular) (2 or 6 groups) and is used primarily in industry.
According to different purposes, the types of modules are divided into various shapes and encapsulation methods, which have been serialized.

PRODUCTION CAPACITY OF IGBT